They’re talking about 3d NAND flash, where density is increased by stacking memory cells vertically rather than packing them tighter horizontally. No increase in resolution is required, the increased etching speed means that they can build up a larger number of stacks without increasing the manufacturing time and its’ resulting costs per unit.
Though they also mention that this new technique results in “cleaner edges” on the etched features as well, so some minor resolution improvement would also be possible but it’s more likely to be kept at the same node to improve yields.
The density line is what really threw me off because the edge comment is the only thing even kind of hinting at it being possible. I guess we’ll wait and see!
Ah, I read the article and I understand now.
They’re talking about 3d NAND flash, where density is increased by stacking memory cells vertically rather than packing them tighter horizontally. No increase in resolution is required, the increased etching speed means that they can build up a larger number of stacks without increasing the manufacturing time and its’ resulting costs per unit.
Though they also mention that this new technique results in “cleaner edges” on the etched features as well, so some minor resolution improvement would also be possible but it’s more likely to be kept at the same node to improve yields.
The density line is what really threw me off because the edge comment is the only thing even kind of hinting at it being possible. I guess we’ll wait and see!